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Volumn 9, Issue 4, 1997, Pages 440-442

2.2-W continuous-wave diffraction-limited monolithically integrated master oscillator power amplifier at 854 nm

Author keywords

Amplifier; Diode; Laser; Monolithic

Indexed keywords

CONTINUOUS WAVE LASERS; DIFFRACTION; DIFFRACTION GRATINGS; LIGHT MODULATION; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SOLID STATE OSCILLATORS;

EID: 0031121975     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.559381     Document Type: Article
Times cited : (63)

References (9)
  • 1
    • 0027115419 scopus 로고
    • 1.1 W CW, diffraction-limited operation of a monolithically-integrated flared amplifier master oscillator power amplifier
    • D. Welch, R. Parke, D. Mehuys, A. Hardy, R. Lang, S. O'Brien, and D. Scifres, "1.1 W CW, diffraction-limited operation of a monolithically-integrated flared amplifier master oscillator power amplifier," Electron. Lett., vol. 28, pp. 2006-2008, 1992.
    • (1992) Electron. Lett. , vol.28 , pp. 2006-2008
    • Welch, D.1    Parke, R.2    Mehuys, D.3    Hardy, A.4    Lang, R.5    O'Brien, S.6    Scifres, D.7
  • 3
    • 0027617348 scopus 로고
    • Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier
    • S. O'Brien, D. F. Welch, R. Parke, D. Mehuys, K. Dzurko, R. J. Lang, R. Waarts, and D. Scifres, "Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier," IEEE J. Quantum Electron., vol. 29, pp. 2052-2057, 1993.
    • (1993) IEEE J. Quantum Electron. , vol.29 , pp. 2052-2057
    • O'Brien, S.1    Welch, D.F.2    Parke, R.3    Mehuys, D.4    Dzurko, K.5    Lang, R.J.6    Waarts, R.7    Scifres, D.8
  • 4
    • 36449008473 scopus 로고
    • High-power, strained-layer InGaAs/AIGaAs tapered traveling wave amplifier
    • J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power, strained-layer InGaAs/AIGaAs tapered traveling wave amplifier," Appl. Phys. Lett., vol. 61, pp. 740-742, 1992.
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 740-742
    • Walpole, J.N.1    Kintzer, E.S.2    Chinn, S.R.3    Wang, C.A.4    Missaggia, L.J.5
  • 7
    • 0027699035 scopus 로고
    • 1.3 W CW, diffraction-limited monolithically integrated master oscillator flared power amplifier at 863 nm
    • S. O'Brien, D. Mehuys, J. Major, R. Lang, R. Parke, D. F. Welch, and D. Scifres, "1.3 W CW, diffraction-limited monolithically integrated master oscillator flared power amplifier at 863 nm," Electron. Lett., vol. 29, pp. 2109-2110, 1993.
    • (1993) Electron. Lett. , vol.29 , pp. 2109-2110
    • O'Brien, S.1    Mehuys, D.2    Major, J.3    Lang, R.4    Parke, R.5    Welch, D.F.6    Scifres, D.7
  • 8
    • 0028711547 scopus 로고
    • 2.2 W cw diffraction-limited monolithically-integrated master oscillator power amplifier (M-MOPA) at 854 nm
    • Maui, HI, paper TH4.2
    • S. O'Brien, R.J. Lang, R. Parke, J. Major, D. F. Welch, and D. Mehuys, "2.2 W cw diffraction-limited monolithically-integrated master oscillator power amplifier (M-MOPA) at 854 nm," presented at the 14th Int. Semiconductor Laser Conf., Maui, HI, 1994, paper TH4.2.
    • (1994) 14th Int. Semiconductor Laser Conf.
    • O'Brien, S.1    Lang, R.J.2    Parke, R.3    Major, J.4    Welch, D.F.5    Mehuys, D.6
  • 9
    • 0028384120 scopus 로고
    • High power singlemode AlGaAs distributed bragg reflector laser diodes operating at 856 nm
    • J. Major, S. O'Brien, V. Gulgazov, D. F. Welch, and R.J. Lang, "High power singlemode AlGaAs distributed bragg reflector laser diodes operating at 856 nm," Electron. Lett., vol. 30, no. 6, pp. 496-497, 1994.
    • (1994) Electron. Lett. , vol.30 , Issue.6 , pp. 496-497
    • Major, J.1    O'Brien, S.2    Gulgazov, V.3    Welch, D.F.4    Lang, R.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.