Modeling the near-gap refractive index properties of semiconductor multiple quantum wells and superlattices

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 2, Issue 2, 1996, Pages 197-209

  Trivedi, Dhrupad A ^a,b,c,d,e,i   Anderson, Neal G ^{a,c,f,g,h,i,j}  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

^b SPIRE CORPORATION   (United States)

^c IEEE

^d UNIVERSITY OF MUMBAI   (India)

^e UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^f NORTH CAROLINA STATE UNIVERSITY   (United States)

^g IEEE LEOS ^*

^h AMERICAN PHYSICAL SOCIETY   (United States)

ⁱ OPTICAL SOCIETY OF AMERICA   (United States)

^j Materials Research Society

more..

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BAND STRUCTURE; INTEGRATED OPTOELECTRONICS; LIGHT POLARIZATION; OPTICAL WAVEGUIDES; PERMITTIVITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

NEAR GAP REFRACTIVE INDEX; OPTICAL CONSTANTS; POLARIZATION ANISOTROPY; REFRACTIVE INDEX SPECTRA; SEMICONDUCTOR MULTIPLE QUANTUM WELLS;

REFRACTIVE INDEX;

EID: 0030156099     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.577360     Document Type: Article

References (62)

1. G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures. New York: Halsted, 1988.
2. S. H. Wemple and M. DiDomenico, Jr., "Behavior of the electronic dielectric constant in covalent and ionic materials," Phys. Rev., vol. B4, pp. 1338-1351, 1971.
3. 1-xAs," Solid State Commun., vol. 15, pp. 5963, 1974.
4. S. Adachi, "Refractive indices of III-V compounds: Key properties of InGaAsP relevant to device design," J. Appl. Phys., vol. 53, pp. 5863-5869, 1982.
5. 1-xAs: Material parameters for use in research and device applications," J. Appl. Phys., vol. 58, pp. R1-R29, 1985.
6. D. Campi and P. Papuzza, "Refractive index of group IV and binary III-V semiconductors: Comparison of calculated and experimental values," J. Appl Phys., vol. 57, pp. 1305-1310, 1985.
7. J. P. Leburton and K. Hess, "A simple model for the index of refraction of GaAs-AlAs superlattices and heterostructure layers: Contribution of the states around Γ," J. Vac. Sci. Technol., vol. B1, pp. 415-419, 1983.
8. 1-xAs superlattices and multiple quantum wells," Phys Rev., vol. B33, pp. 5465-5472, 1986.
9. _, "Exciton effects in the index of refraction of multiple quantum wells and superlattices," Appl. Phys. Lett., vol. 49. pp. 734-736, 1986.
10. 1-xAs superlattices and multiple quantum wells," Superlattices and Microstructures, vol. 3, pp. 251-256, 1987.
11. "Special issue on strained-layer optoelectronic materials and devices," IEEE J. Quantum Electron., vol. 30, no. 2, Feb. 1994.
12. T. P. Pearsall, Ed., Strained-Layer Superlattices: Physics, in Semiconductors and Semimetals, R. K. Willardson and A. C. Beer. Series Eds. New York: Academic, 1991, vol. 32.
13. A. Baliga, D. Trivedi, and N. G. Anderson. "Tensile-strain effects in quantum well and superlattice band structures," Phys. Rev. B, vol. 49, pp. 10402-10416, 1994.
14. S. Chelles, F. Ferreira, and P. Voisin, "On the design of polarization insensitive optoelectronic devices," Semiconduct. Sci. Technol., vol. 10, pp. 105-109, 1994.
15. 1-xAs-GaAs quantum well diode lasers," Appl. Phys. Lett., vol. 63, pp. 2312-2314, 1993.
16. D. P. Bour, J. Beernink, D. W. Treat, T. L. Paoli, and R. L. Thornton, "Dual-polarization, single quantum-well AlGaInP laser diode structure," IEEE J. Quantum Electron., vol. 30, pp. 2738-2742, 1994.
17. A. Baliga, F. Agahi, N. G. Anderson, K. M. Lau, and S. Cadambi, "Tensile strain and threshold currents in GaAsP-AlGaAs single quantum well lasers," IEEE J. Quantum Electron., vol. 32, pp. 29-37, 1996.
18. N. J. M. Horning, G. Fiorenza, and H.-L. Cui, "Inverse dielectric function of a periodic superlattice," Phys Rev., vol. B31, pp. 6349-6353, 1985.
19. J. M. N. Horning and J. D. Mancini, "Type-11 superlattice: Inversion of the dielectric function," Phys Rev., vol. B34, pp. 8954-8957, 1986.
20. R. Tsu and L. Ioriatti, "Longitudinal dielectric constant for quantum wells," Superlattices and Microstructures, vol. 1, pp. 295-297, 1985.
21. N. H. Spector and H. H. Hassan, "Dielectric function due to carrier confinement in semiconducting quantum well systems," Physics Lett., vol. A129, pp. 121-123, 1988.
22. E. H. Li, and B. Weiss, "The change in refractive index of AlGaAs-GaAs single quantum wells due to impurity-induced mixing," IEEE Photon. Technol. Lett., vol. 3, pp. 787-789, 1991.
23. 1-xAs-GaAs heterostructures," J. Appl. Phys. vol. 58, pp. 341-344, 1985.
24. E. H. Li, B. L. Weiss, K. S. Chan, and J. Micallef, "Polarization dependent refractive index of an interdiffusion induced AlGaAs/GaAs quantum well," Appl. Phys. Lett., vol. 62, pp. 550-552, 1993.
25. J. Micallef and B. L. Weiss, "The refractive index of III-V semiconductor strained-layer superlattices," Optical and Quantum Electron., vol. 23, pp. 399-408, 1991.
26. F. Bassani and G. P. Parravicini, Electronic States and Optical Transitions in Solids. New York: Pergamon, 1975.
27. N. F. Johnson, H. Ehrenreich, P. M. Hui, and P. M. Young, "Electronic and optical properties of III-V and II-VI semiconductor superlattices," Phys. Rev., vol. B41, pp. 3655-3669, 1990.
28. P. M. Young, P. M. Hui, and H. Ehrenreich, "Excitons and optical transitions in III-V semiconductor superlattices," Phys. Rev., vol. B44, pp. 12969-12976, 1991.
29. P. Vogl, J. P. Hjalmarson, and J. D. Dow, "A semi-empirical tight-binding theory of the electronic structure of semiconductors," J. Phys. Chem. Solids, vol. 44, pp. 365-378, 1988.
30. L. C. L. Y. Voon and L. R. Ram-Mohan, "Tight-binding representation of the optical matrix elements," Phys. Rev., vol. B47, pp. 15500-15508, 1993.
31. N. G. Anderson and S. D. Jones, "Optimized tight-binding valence bands and heterojunction offsets in strained III-V semiconductors," J. Appl. Phys., vol. 70, pp. 4342-4356, 1991.
32. D. Campi and C. Villavecchia, "Versatile approach to the excitonic properties in semiconductor quantum wells," J. Phys. Chem. Solids, vol. 53, pp. 785-790, 1992.
33. _, "Excitonic properties in semiconductor quantum wells: Numerical calculations and scaling behavior," IEEE J. Quantum Electron., vol. 28, pp. 1765-1772, 1992.
34. G. J. Sonek, J. M. Ballantyne, J. M. Chen, G. M. Carter, S. W. Brown, E. S. Koteles, and J. P. Salerno, "Dielectric properties of GaAs/AlGaAs multiple quantum well waveguides," IEEE J. Quantum Electron., vol. 22, pp. 1015-1018, 1986.
35. S. I. Hansen, J. H. Marsh, J. S. Roberts, and R. Gwilliam, "Refractive index changes in a GaAs multiple quantum well structure produced by impurity-induced disordering using boron and florine," Appl. Phys. Lett., vol. 58, pp. 1398-1400, 1991.
36. Y. Suzuki and H. Okamoto, "Refractive index of GaAs-AlAs superlattices grown by MBE," J. Electron. Mater., vol. 12, pp. 397-411, 1983.
37. D. C. Bertolet, J. K. Hsu, and K. M. Lau, "Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure OMCVD," Appl. Phys. Lett., vol. 53, pp. 2501-2503, 1988.
38. E. S. Koteles, D. A. Owens, D. C. Bertolet, J. K. Hsu, and K. M. Lau, "Reversal of light- and heavy-hole valence bands in GaAsP/AlGaAs quantum wells," Surface Science, vol. 228, pp. 314-317, 1990.
39. x/GaAs quantum-well structures with tensile-strained barriers," IEEE J. Quantum Electron., vol. 30, pp. 459-465, 1994.
40. D. Trivedi and N. G. Anderson, "Modeling the near-gap dielectric properties of strained-layer multiple-quantum wells and superlattices," LEOS'94 Conf. Dig., 1994, vol. 2, pp. 291-292.
41. N. Holonyak Jr., W. D. Laidig, M. D. Camras, J. J. Coleman, and P. D. Dapkus, "IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity," Appl. Phys. Lett., vol. 39, pp. 102-104, 1981.
42. W. D. Laidig, N. Holonyak Jr., M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, "Disorder of an AlAs-GaAs superlattice by impurity diffusion" Appl. Phys. Lett., vol. 38, pp. 776-778, 1981.
43. 1-xAs-GaAs superlattice by Zn diffusion," Appl. Phys. Lett., vol. 54, pp. 6382-6384, 1983.
44. J. W. Lee and W. D. Laidig, "Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlattices," J. Electron. Mater., vol. 13, pp. 147-165, 1983.
45. D. G. Deppe and N. Holonyak, Jr., "Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures," J. Appl. Phys., vol. 64, pp. R93-R113, 1988.
46. 1-zAs quantum-well heterostructures," J. Appl. Phys., vol. 70, pp. 2031-2034, 1991.
47. J. P. Leburton, K. Hess, N. Holonyak, Jr., J. J. Coleman, and M. Camras, "Index of refraction of AlAs-GaAs superlattices," Appl. Phys. Lett., vol. 54, pp. 4230-4232, 1983.
48. W. D. Laidig, J. W. Lee, and P. J. Caldwell, "An embedded-mirror semiconductor laser," Appl. Phys. Lett., vol. 45, pp. 485-487, 1984.
49. 1-xAs-GaAs quantum well lasers," J. Appl. Phys., vol. 58, pp. 4515-4520, 1985.
50. R. L. Thornton, W. J. Mosby, and H. F. Chung, "Surface skimming buried heterostructure laser with applications to optoelectronic integration," Appl. Phys. Lett., vol. 59, pp. 513-515, 1991.
51. W. X. Zou, J. L. Merz, R. J. Fu, and C. S. Hong, "Ultralow threshold strained InGaAs-GaAs quantum well lasers by impurity-induced disordering," Electron. Lett., vol. 27, no. 14, pp. 1241-1243, 1991.
52. W. X. Zou, T. Bowen, K. K. Law, D. B. Young, and J. L. Merz, "1.0-mA-threhold uncoated lasers by impurity-induced disordering," IEEE. Photon Technol. Lett., vol. 5, pp. 591-594, 1993.
53. S. Y. Hu, M. G. Peters, D. B. Young, A. C. Gossard, and L. A. Coldren, "Submilliampere-threshold InGaAs-GaAs quantum-well ridge-waveguide lasers with lateral confinement provided by impurity-induced disordering," IEEE Photon Technol. Lett., vol. 7, pp. 712-714, July 1995.
54. F. Julien, P. D. Swanson, M. A. Emanuel, D. G. Deppe, T. A. DeTemple, J. J. Coleman, and N. Holonyak Jr., "Impurity-induced disorder-delineated optical waveguides in GaAs-AlGaAs superlattices," Appl. Phys. Lett., vol. 50, pp. 866-868, 1987.
55. T. Wolf, C.-L. Shieh, R. Engelmann, K. Alavi, and J. Mantz, "Lateral refractive index step in GaAs-AlGaAs multiple quantum well waveguides fabricated by impurity-induced disordering," Appl. Phys. Lett., vol. 55, pp. 1412-1414, 1989.
56. 0.48As/InP optical waveguides fabricated by Zn-induced impurity-induced layer disordering," J. Appl. Phys., vol. 70, pp. 5136-5137, 1991.
57. R. M. De La Rue and J. H. Marsh, "Integration technologies for III-V semiconductor optoelectronics based on quantum well waveguides," in SPIE Critical Rev., vol. CR45, pp. 259-288, 1994.
58. J. H. Marsh, "Neutral impurity disordering of III-V quantum well waveguide devices," in Waveguide Optoelectronics, J. H. Marsh and R. M. De La Rue, Eds. Dordrecht, The Netherlands: Kluwer Academic, 1992, pp. 185-204.
59. O. Wada, A. Furuya, and M. Makiuchi, "Planar, compatible OEIC's based on multiquantum well structures," IEEE Photon. Technol. Lett., vol. 1, pp. 16-18, 1989.
60. D. Trivedi and N. G. Anderson, "Strained-layer superlattices for polarization-insensitive integrated waveguide applications," in Guided Wave Optoelectronics: Device Characterization, Analysis, and Design, T. Tamir, G. Griffel, and H. L. Bertoni, Eds. New York, Plenum, 1995, pp. 205-211.
61. K. Itaya, M. J. Mondry, P. D. Floyd, L. A. Coldren, and J. L. Merz, "Impurity-induced disordering of AlGaInAs quantum wells by low temperature Zn diffusion," J. Electron. Mater., vol. 25, pp. 565-570, 1996.
62. R. L. Thornton, D. P. Bour, D. Treat, F. A. Ponce, J. C. Tramontana, and F. J. Endicott, "Defect generation and supression during the impurity-induced layer disordering of quantum-sized GaAs/GaInP layers," Appl. Phys. Lett., vol. 65, pp. 2696-2698, 1994.