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Volumn 34, Issue 4, 1999, Pages 476-483

New three-dimensional memory array architecture for future ultrahigh-density DRAM

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR);

EID: 0033115735     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.753680     Document Type: Article
Times cited : (16)

References (11)
  • 3
    • 0031187306 scopus 로고    scopus 로고
    • An accurate model of fully-depleted surrounding gate transistor
    • July
    • T. Endoh, T. Nakamura, and F. Masuoka, "An accurate model of fully-depleted surrounding gate transistor," IEICE Trans. Electron., vol. E80-C. no. 7, pp. 905-910, July 1997.
    • (1997) IEICE Trans. Electron. , vol.E80-C , Issue.7 , pp. 905-910
    • Endoh, T.1    Nakamura, T.2    Masuoka, F.3
  • 4
    • 0031192554 scopus 로고    scopus 로고
    • An analytic steady-state current-voltage characteristics of short channel fully-depleted surrounding gate transistor (FD-SGT)
    • July
    • _, "An analytic steady-state current-voltage characteristics of short channel fully-depleted surrounding gate transistor (FD-SGT)," IEICE Trans. Electron., vol. E80-C, no. 7, pp. 911-917, July 1997.
    • (1997) IEICE Trans. Electron. , vol.E80-C , Issue.7 , pp. 911-917
  • 6
    • 0026909715 scopus 로고
    • Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA)
    • Aug.
    • S. Miyano, M. Hirose, and F. Masuoka, "Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA)," IEEE Trans. Electron Devices, vol. 39, pp. 1876-1881, Aug. 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1876-1881
    • Miyano, S.1    Hirose, M.2    Masuoka, F.3
  • 11
    • 0032156558 scopus 로고    scopus 로고
    • The analysis of the stacked-surrounding gate transistor (S-SGT) DRAM for the high speed and low voltage operation
    • Sept.
    • T. Endoh, K. Shinmei, H. Sakuraba, and F. Masuoka, "The analysis of the stacked-surrounding gate transistor (S-SGT) DRAM for the high speed and low voltage operation," J. Inst. Electron. Commun. Eng. Jpn., vol. E81-C, no. 9. pp. 1491-1498, Sept. 1998.
    • (1998) J. Inst. Electron. Commun. Eng. Jpn. , vol.E81-C , Issue.9 , pp. 1491-1498
    • Endoh, T.1    Shinmei, K.2    Sakuraba, H.3    Masuoka, F.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.