Growth and doping studies of CdTe epilayers on GaAs substrates by low-pressure plasma-radical-assisted metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 200, Issue 1-2, 1999, Pages 90-95

  Niraula, M ^a   Aoki, T ^a   Nakanishi, Y ^a   Hatanaka, Y ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; HYDROGEN; IODINE; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

HETEROEPITAXIAL LAYER; PLASMA RADICAL;

FILM GROWTH;

EID: 0033115290     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00956-7     Document Type: Article

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