Dynamic reflectance anisotropy and reflectance measurements of the deposition of Si on GaAs(001) -c(4 × 4)

Journal of Crystal Growth

Volumn 172, Issue 3-4, 1997, Pages 275-283

  Taylor, A G ^a   Turner, A R ^b   Pemble, M E ^c   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Plessey Semiconductors   (United Kingdom)

^c UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; MODIFICATION; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTONS; REFLECTOMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; SURFACE ROUGHNESS; TRANSPORT PROPERTIES;

DYNAMIC REFLECTANCE ANISOTROPY; STATIC REFLECTANCE DIFFERENCE SPECTROSCOPY; SURFACE MIGRATION;

SEMICONDUCTING SILICON;

EID: 0031103681     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00752-X     Document Type: Article

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