A 0.25 μm CMOS fully integrated IF-baseband-strip for a single superheterodyne GSM receiver

European Solid-State Circuits Conference

Volumn , Issue , 1998, Pages 64-67

  Orsatti, Paolo ^a   Piazza, Francesco ^a   Huang, Qiuting ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MISMATCHES; CMOS TECHNOLOGY; FULLY INTEGRATED; LOW-PASS; OUTPUT FILTERS; POWER SUPPLY; QUADRATURE DEMODULATORS; VOLTAGE GAIN;

CMOS INTEGRATED CIRCUITS;

HETERODYNING;

EID: 0347525630     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIR.1998.186209     Document Type: Conference Paper

References (4)

1. A.Abidi ct al. The Future of CMOS Wireless Tranceivers. ISSCC Digest of Technical Papers, pp. 118-119. Feb. 1997. San Francisco. USA
2. J.Rudell ct al. A 1.9GHz Wide-band IF Double Conversion CMOS Integrated Receiver for Cordless Telephone Applications. ISSCC Digest of Tech. Papers, pp.304-305. Feb. 1997. San Francisco. USA
3. F. Piazza ct al. A 0.25 [im CMOS Transceiver Front-End for GSM. CICC Proceedings. May 1998. Santa Clara. USA
4. Q. Huang. On the Exact Design of RF-Oscillators. CICC Proceedings. May 1998. Santa Clara. USA