22 GHz monolithically integrated oscillator in silicon bipolar technology

Electronics Letters

Volumn 35, Issue 6, 1999, Pages 438-439

  Knapp, H ^a   Wohlmuth, H D ^a   Bock J ^a   Scholtz, A ^b  

^a SIEMENS AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; ELECTRIC INDUCTORS; ELECTRIC POWER SUPPLIES TO APPARATUS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; TUNING;

MONOLITHICALLY INTEGRATED OSCILLATOR; PHASE NOISE; SILICON BIPOLAR TECHNOLOGY;

OSCILLATORS (ELECTRONIC);

EID: 0033099649     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990343     Document Type: Article

References (7)

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2. JANSEN, B., NEGUS, K., and LEE, D.: 'Silicon bipolar VCO family for 1.1 to 2.2GHz with fully-integrated tank and tuning circuits'. ISSCC Dig. Tech. Papers, 1997, pp. 392-393
3. CRANINCKX, J., and STEYAERT, M.: 'A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors'. IEEE J. Solid-State Circuits, 1997, SC-32, (5), pp. 736-744
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6. BÖCK, J., FELDER, A., MEISTER, T., PRANOSCH, M., AUFINGER, K., WURZER, M., SCHREITER, R., BOGUTH, S., and TREITINGER, L.: 'A 50GHz implanted base silicon bipolar technology with 35GHz static frequency divider'. Symp. VLSI Tech. Dig. Tech. Papers, February 1996, pp. 108-109
7. WOYCIEHOWSKY, S.-P., and NOTTENBURG, R.N.: '10GHz LC-tuned VCO with coarse and fine frequency control'. Electron. Lett., 1997, 33, (11), pp. 917-918