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Volumn 33, Issue 5, 1997, Pages 422-423

40GHz monolithically-integrated fully-balanced VCO using 0.3μm HEMTs

Author keywords

Voltage controlled oscillators

Indexed keywords

CAPACITANCE; DIGITAL COMMUNICATION SYSTEMS; FIBER OPTIC NETWORKS; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC INTEGRATED CIRCUITS; PHASE LOCKED LOOPS; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE; TUNING; WAVEGUIDES;

EID: 0031069065     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970290     Document Type: Article
Times cited : (8)

References (5)
  • 1
    • 3242820386 scopus 로고    scopus 로고
    • Patent Publication DE 43 31 499 Al, Deutsches Patentamt, 1995
    • WANG, Z.-G., BERROTH, M.: Patent Publication DE 43 31 499 Al, Deutsches Patentamt, 1995
    • Wang, Z.-G.1    Berroth, M.2
  • 5
    • 3242851515 scopus 로고
    • Advanced high electron concentration GaAs/ AlxGa1-xAs pulse-doped double heterostructure for device application
    • KÖHLER, K., GANSER, P., BACHEM, K.H., MEIER, M., HORNUNG, J., and HÜLSMANN, A.: 'Advanced high electron concentration GaAs/ AlxGa1-xAs pulse-doped double heterostructure for device application'. Inst. Phys. Conf. Ser., 1990, Vol. 112, pp. 521-526
    • (1990) Inst. Phys. Conf. Ser. , vol.112 , pp. 521-526
    • Köhler, K.1    Ganser, P.2    Bachem, K.H.3    Meier, M.4    Hornung, J.5    Hülsmann, A.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.