Defects in the ion-beam-synthesized epitaxial Si/CoSi2/Si(111) system

Philosophical Magazine Letters

Volumn 73, Issue 6, 1996, Pages 309-318

  Satyam, P V ^a   Sekar, K ^a   Kuri, G ^a   Sundaravel, B ^a   Mahapatra, D P ^a   Dev, B N ^a  

^a INSTITUTE OF PHYSICS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COBALT COMPOUNDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HELIUM; INTERFACES (MATERIALS); IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;

ENERGY DEPENDENCE; EPITAXIAL LAYER; METALLIC SILICIDES;

CRYSTAL DEFECTS;

EID: 0030170415     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008396180579     Document Type: Article

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