|
Volumn 19, Issue 1, 1996, Pages 51-60
|
Hydrogen in semiconductors
a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
CHEMICAL BONDS;
ELECTRONIC PROPERTIES;
ENERGY GAP;
HYDROGEN;
INTERFACES (MATERIALS);
PASSIVATION;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
CHEMICAL ACTIVITY;
CRYSTALLINE SEMICONDUCTORS;
DIFFUSIVITY;
ELECTRONIC FLOW;
INTERFACE STATES;
HYDROGENATION;
|
EID: 0030080855
PISSN: 02504707
EISSN: None
Source Type: Journal
DOI: 10.1007/BF02744787 Document Type: Article |
Times cited : (15)
|
References (0)
|