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Volumn 225, Issue , 1995, Pages 314-317

Effect of irradiation on the microhardness of the LEC grown semi-insulating GaAs single crystals

(11) Udhayasankar, M a Arulkumaran, S a Arokiaraj, J a Santhanaraghavan, P a Sundarakannan, B a Kumar, J a Ramasamy, P a Nair, K G M b Magudapathy, P b Thampi, N S b Krishan, K b

a ANNA UNIVERSITY (India)

b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH (India)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; ION IMPLANTATION; IONS; MICROHARDNESS; SEMICONDUCTING GALLIUM; X RAY DIFFRACTION;

CONDUCTING MATERIALS; HALL EFFECT MEASUREMENT; HYDROGEN ION IMPLANTATION; IRRADIATED SAMPLES; LIQUID ENCAPSULATED CZOCHRALSKI; MICROHARDNESS MEASUREMENT; SEMI-INSULATING; SEMI-INSULATING GAAS;

SINGLE CRYSTALS;

EID: 0039018646 PISSN: 00223115 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3115(95)00048-8 Document Type: Article

Times cited : (3)

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