Calculations of the specific resistance of contacts to III-V nitride compounds

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 849-854

  Barnes, P A ^a   Zhang, X J ^a   Lovejoy, M L ^a   Drummond, T J ^a   Hjalmarson, H P ^a   Crawford, M ^a   Shul, R J ^a   Zolper, J C ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; DIELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FERMI LEVEL; INTEGRAL EQUATIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; METALS; NITRIDES; OHMIC CONTACTS; SEMICONDUCTOR DOPING;

DEPLETION WIDTH; METAL SEMICONDUCTOR INTERFACE; SPECIFIC CONTACT RESISTANCE; WKB APPROXIMATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726919     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)