High-temperature characteristics of 1.3-μm InAsP/InAlGaAs MQW lasers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 559-562

  Yamada, Mitsuki ^a   Anan, Takayoshi ^a   Tokutome, Keiichi ^a   Sugou, Shigeo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CONTINUOUS WAVE LASERS; CURRENT DENSITY; LASER MODES; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

BAND DISCONTINUITY; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

QUANTUM WELL LASERS;

EID: 0030713641     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)