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Volumn 46, Issue 2, 1999, Pages 429-431

EOS/ESD reliability of partially depleted SOI technology

Author keywords

ESD; Modeling; SOI

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DISCHARGES; ELECTROSTATICS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

EID: 0033079805     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740912     Document Type: Article
Times cited : (9)

References (8)
  • 1
    • 0028194336 scopus 로고
    • "Comparison of ESD protection capability of SOI and BULK CMOS output buffers," in
    • M. Chan, S. S. Yuen, Z. J.-Ma, K. Y. Hui, P. K. Ko, and C. Hu, "Comparison of ESD protection capability of SOI and BULK CMOS output buffers," in Proc. Int. Rel. Phys. Symp., 1994, pp. 292-298.
    • (1994) Proc. Int. Rel. Phys. Symp. , pp. 292-298
    • Chan, M.1    Yuen, S.S.2    J-Ma, Z.3    Hui, K.Y.4    Ko, P.K.5    Hu, C.6
  • 2
    • 0029537444 scopus 로고
    • " EOS/ESD protection circuit design for deep submicron SOI technology," in
    • S. Ramaswamy, P. Raha, E. Rosenbaum, and S. M. Kang, " EOS/ESD protection circuit design for deep submicron SOI technology," in Proc. EOS/ESD Symp., 1995, pp. 212-217.
    • (1995) Proc. EOS/ESD Symp. , pp. 212-217
    • Ramaswamy, S.1    Raha, P.2    Rosenbaum, E.3    Kang, S.M.4
  • 3
    • 0031102960 scopus 로고    scopus 로고
    • "Heat flow analysis for EOS/ESD protection device design in SOI technology,"
    • P. Raha, S. Ramaswamy, and E. Rosenbaum, "Heat flow analysis for EOS/ESD protection device design in SOI technology," IEEE Trans. Electron Devices, vol. 44, pp. 464-471, Mar. 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 464-471
    • Raha, P.1    Ramaswamy, S.2    Rosenbaum, E.3
  • 6
    • 0030410190 scopus 로고    scopus 로고
    • "An ESD protection circuit for TFSOI technology," in
    • J. C. Smith, M. Lien, and S. Veeraghavan, "An ESD protection circuit for TFSOI technology," in Proc. Int. SOI Conf., 1996, pp. 170-171.
    • (1996) Proc. Int. SOI Conf. , pp. 170-171
    • Smith, J.C.1    Lien, M.2    Veeraghavan, S.3
  • 7
    • 0031336339 scopus 로고    scopus 로고
    • "Protection of ESD protection levels and novel protection devices for thin film SOI technology," in
    • P. K. Raha, J. C. Smith, J. W. Miller, and E. Rosenbaum, "Protection of ESD protection levels and novel protection devices for thin film SOI technology," in Proc. EOS/ESD Symp., 1997, pp. 356-365.
    • (1997) Proc. EOS/ESD Symp. , pp. 356-365
    • Raha, P.K.1    Smith, J.C.2    Miller, J.W.3    Rosenbaum, E.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.