Electromigration-induced transgranular failure mechanisms in single-crystal aluminum interconnects

Journal of Applied Physics

Volumn 81, Issue 9, 1997, Pages 6062-6072

  Joo, Young Chang ^a,b   Thompson, Carl V ^a  

^a Massachusetts Institute of Technology   (United States)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346514820     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364454     Document Type: Article

References (37)

1. D. T. Walton, H. J. Frost, and C. V. Thompson, Appl. Phys. Lett. 61, 40 (1992).
2. E. Kinsbron, Appl. Phys. Lett. 36, 968 (1980).
3. J. E. Sanchez, Jr., L. T. McKnelly, and J. W. Morris, Jr., J. Electron. Mater. 19, 1213 (1990).
4. J. Rose, Appl. Phys. Lett. 61, 2170 (1992).
5. I. A. Blech, J. Appl. Phys. 47, 1203 (1976).
6. E. Arzt and W. D. Nix, J. Mater. Res. 6, 731 (1991).
7. D. T. Walton, M. S. thesis, Tayler School of Engineering, Dartmouth College, 1991.
8. C. V. Thompson and J. R. Lloyd, MRS Bull. XVIII, 19 (1993).
9. E. M. Atakov, J. J. Clement, and B. Miner, Mater. Res. Soc. Symp. Proc. 309, 133 (1993); IEEE/IRPS, 213 (1994).
10. E. M. Atakov, J. J. Clement, and B. Miner, Mater. Res. Soc. Symp. Proc. 309, 133 (1993); IEEE/IRPS, 213 (1994).
11. Y.-C. Joo, and C. V. Thompson, Mater. Res. Soc. Symp. Proc. 309, 351 (1993).
12. Y.-C. Joo and C. V. Thompson, Mater. Res. Soc. Symp. Proc. 338, 319 (1994).
13. E. Arzt, O. Kraft, and U. E. Mockl, Mater. Res. Soc. Symp. Proc. 338, 397 (1994).
14. Y.-C. Joo and C. V. Thompson, J. Appl. Phys. 76, 7339 (1994).
15. R. Kirchheim and U. Kaeber, J. Appl. Phys. 70, 172 (1991).
16. J. R. Lloyd, J. Appl. Phys. 69, 7601 (1991).
17. M. A. Korhonon, P. Borgesen, and C.-Y. Li, Mater. Res. Soc. Symp. Proc. 239, 695 (1992).
18. M. Shatzkes and J. R. Lloyd, J. Appl. Phys. 59, 3890 (1986).
19. M. A. Korhonon, P. Borgesen, K. N. Tu, and C.-Y. Li, J. Appl. Phys. 73, 3790 (1993).
20. Y.-C. Joo, Ph.D. thesis, Department of Materials Science and Engineering, Massachusetts Institute of Technology, 1995.
21. H. P. Longworth and C. V. Thompson, Appl. Phys. Lett. 60, 2219 (1992).
22. F. d'Heurle and I. Ames, Appl. Phys. Lett. 16, 80 (1970).
23. S. Shingubara, Y. Nakasaki, and H. Kaneko, Appl. Phys. Lett. 58, 42 (1991).
24. J. Cho, Ph.D. thesis, Department of Materials Science and Engineering, Massachusetts Institute of Technology, 1990.
25. J. M. Pierce and M. E. Thomas, Appl. Phys. Lett. 39, 165 (1981).
26. A. Gangulee and F. M. d'Heurle, Thin Solid Films 16, 227 (1973).
27. C. V. Thompson and H. Kahn, J. Electron. Mater. 22, 581 (1993).
28. C. V. Thompson and J. Cho, IEEE Electron Device Lett. EDL-7, 667 (1986).
29. E. Arzt, O. Kraft, W. D. Nix, and J. E. Sanchez, Jr., J. Appl. Phys. 76, 1563 (1994).
30. P. R. Besser, M. C. Madden, and P. A. Flinn, J. Appl. Phys. 72, 3792 (1992).
31. D. B. Knorr, Mater. Res. Soc. Symp. Proc. 309, 75 (1993).
32. M. J. Attardo and R. Rosenberg, J. Appl. Phys. 41, 2381 (1970).
33. W. DeSorbo and D. Turnbull, Phys. Rev. 115, 560 (1959).
34. J. J. Spokas and C. P. Slichter, Phys. Rev. 113, 1462 (1959).
35. T. S. Lundy and J. F. Murdock. J. Appl. Phys. 33, 1671 (1962).
36. B. D. Knowlton, J. J. Clement, R. I. Frank, and C. V. Thompson, Mater. Res. Soc. Symp. Proc. 391, 189 (1995).
37. J. R. Black, IEEE Trans. Electron Devices ED-16, 338 (1969).