Digital Etching of InP by Intermittent Injection of Trisdimethylaminophosphorus in Ultrahigh Vacuum

Journal of the Electrochemical Society

Volumn 146, Issue 2, 1999, Pages 547-550

  Otsuka, Nobuyuki ^a   Nishizawa, Jun Ichi ^a,b   Oyama, Yutaka ^a,b,c   Kikuchi, Hideyuki ^a,b   Suto, Ken ^a,b,c  

^a Telecommunications Advancement Organization of Japan   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DECOMPOSITION; EPITAXIAL GROWTH; ETCHING; PHOSPHORUS COMPOUNDS; PRESSURE EFFECTS; VACUUM TECHNOLOGY;

MOLECULAR LAYER EPITAXY; TRISDIMETHYLAMINOPHOSPHORUS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033075611     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391641     Document Type: Article

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