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Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 387-392

Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic

(4) Li, N Y a Hsin, Y M a Asbeck, P M a Tu, C W a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; CHARGE CARRIERS; CHEMICAL BEAM EPITAXY; ETCHING; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE CHARACTERISTICS;

SEMICONDUCTOR JUNCTIONS;

EID: 0031140999 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00827-5 Document Type: Article

Times cited : (6)

References (22)

1
- 0342916137
- D.S.L. Mui, T.A. Strand, B.J. Thibeault, L.A. Coldren, P.M. Petroff and E.L. Hu, Inst. Phys. Conf. Ser. 141 (1995) 69.
- (1995) Inst. Phys. Conf. Ser. , vol.141 , pp. 69
- Mui, D.S.L.¹ Strand, T.A.² Thibeault, B.J.³ Coldren, L.A.⁴ Petroff, P.M.⁵ Hu, E.L.⁶

2
- 30244455573
- K. Tappura, A. Salokatve, K. Rakennus, H. Asonen and M. Pessa, Appl. Phys. Lett. 57 (1990) 2313.
- (1990) Appl. Phys. Lett. , vol.57 , pp. 2313
- Tappura, K.¹ Salokatve, A.² Rakennus, K.³ Asonen, H.⁴ Pessa, M.⁵

3
- 0028383744
- W.T. Tsang, R. Kapre and P.F. Sciortino, Jr., J. Crystal Growth 136 (1994) 42.
- (1994) J. Crystal Growth , vol.136 , pp. 42
- Tsang, W.T.¹ Kapre, R.² Sciortino P.F., Jr.³

4
- 30244527366
- Santa Barbara, CA, 26-28 June
- K. Tateno and Y. Kohama, presented at 38th Electron. Mater. Conf., Santa Barbara, CA, 26-28 June 1996.
- 38th Electron. Mater. Conf. , pp. 1996
- Tateno, K.¹ Kohama, Y.²

5
- 30244534758
- Santa Barbara, CA, 26-28 June
- H.Q. Hou, B.E. Hammons and H.C. Chui, presented at 38th Electron. Mater. Conf., Santa Barbara, CA, 26-28 June 1996.
- 38th Electron. Mater. Conf. , pp. 1996
- Hou, H.Q.¹ Hammons, B.E.² Chui, H.C.³

6
- 0027544262
- P. Gimmnich, A. Greiling, J.L. Lorberth, C. Thalmann, K. Rademann, G. Zimmermann, H. Protzmann, W. Stolz and E.O. Göbel, Mater. Sci. Eng. B17 (1993) 21.
- (1993) Mater. Sci. Eng. , vol.B17 , pp. 21
- Gimmnich, P.¹ Greiling, A.² Lorberth, J.L.³ Thalmann, C.⁴ Rademann, K.⁵ Zimmermann, G.⁶ Protzmann, H.⁷ Stolz, W.⁸ Göbel, E.O.⁹

7
- 0039579915
- C.R. Abernathy, P.W. Wisk, D.A. Bohling and G.T. Muhr, Appl. Phys. Lett. 60 (1992) 2421.
- (1992) Appl. Phys. Lett. , vol.60 , pp. 2421
- Abernathy, C.R.¹ Wisk, P.W.² Bohling, D.A.³ Muhr, G.T.⁴

8
- 30244523118
- S. Salim, J.P. Lu, K.F. Jensen and D.A. Bohling, J. Crystal Growth 124 (1992) 126.
- (1992) J. Crystal Growth , vol.124 , pp. 126
- Salim, S.¹ Lu, J.P.² Jensen, K.F.³ Bohling, D.A.⁴

9
- 0028421035
- K. Ishikura, A. Takeuchi, M. Kurihara, H. Machida and F. Hasegawa, Jpn. J. Appl. Phys. 33 (1994) L494.
- (1994) Jpn. J. Appl. Phys. , vol.33
- Ishikura, K.¹ Takeuchi, A.² Kurihara, M.³ Machida, H.⁴ Hasegawa, F.⁵

10
- 0029304548
- Y. Yoshida and M. Sasaki, J. Crystal Growth 150 (1995) 557.
- (1995) J. Crystal Growth , vol.150 , pp. 557
- Yoshida, Y.¹ Sasaki, M.²

11
- 0028761916
- H. Asahi, X.F. Liu, K. Inoue, D. Marx, K. Asami, K. Miki and S. Gonda, J. Crystal Growth 145 (1994) 668.
- (1994) J. Crystal Growth , vol.145 , pp. 668
- Asahi, H.¹ Liu, X.F.² Inoue, K.³ Marx, D.⁴ Asami, K.⁵ Miki, K.⁶ Gonda, S.⁷

12
- 0029308337
- A.B. Villaflor, H. Asahi, D. Marx, K. Miki, K. Yamamoto and S. Gonda, J. Crystal Growth 150 (1995) 638.
- (1995) J. Crystal Growth , vol.150 , pp. 638
- Villaflor, A.B.¹ Asahi, H.² Marx, D.³ Miki, K.⁴ Yamamoto, K.⁵ Gonda, S.⁶

13
- 0029306764
- D. Marx, H. Asahi, X.F. Liu, M. Higashiwaki, A.B. Villaflor, K. Miki, K. Yamamoto, S. Gonda, S. Shimomura and S. Hiyamizu, J. Crystal Growth 150 (1995) 551.
- (1995) J. Crystal Growth , vol.150 , pp. 551
- Marx, D.¹ Asahi, H.² Liu, X.F.³ Higashiwaki, M.⁴ Villaflor, A.B.⁵ Miki, K.⁶ Yamamoto, K.⁷ Gonda, S.⁸ Shimomura, S.⁹ Hiyamizu, S.¹⁰

14
- 0030563555
- C.W. Tu, H.K. Dong and N.Y. Li, J. Crystal Growth 163 (1996) 187.
- (1996) J. Crystal Growth , vol.163 , pp. 187
- Tu, C.W.¹ Dong, H.K.² Li, N.Y.³

15
- 0028554820
- H.K. Dong, S.C.H. Hung and C.W. Tu, Mater. Res. Soc. Proc. 340 (1994) 193.
- (1994) Mater. Res. Soc. Proc. , vol.340 , pp. 193
- Dong, H.K.¹ Hung, S.C.H.² Tu, C.W.³

16
- 0029304455
- N.Y. Li, Y.M. Hsin, H.K. Dong, T. Nakamura, P.M. Asbeck and C.W. Tu, J. Crystal Growth 150 (1995) 562.
- (1995) J. Crystal Growth , vol.150 , pp. 562
- Li, N.Y.¹ Hsin, Y.M.² Dong, H.K.³ Nakamura, T.⁴ Asbeck, P.M.⁵ Tu, C.W.⁶

17
- 0029251625
- H.K. Dong, N.Y. Li, C.W. Tu, M. Geva and W.C. Mitchel, J. Electron. Mater. 24 (1995) 69.
- (1995) J. Electron. Mater. , vol.24 , pp. 69
- Dong, H.K.¹ Li, N.Y.² Tu, C.W.³ Geva, M.⁴ Mitchel, W.C.⁵

18
- 22244472076
- A.J. Spring Thorpe, W.T. Moore, A. Majeed and R.W. Streater, J. Vac. Sci. Technol. B 11 (4) (1993) 1275.
- (1993) J. Vac. Sci. Technol. B , vol.11 , Issue.4 , pp. 1275
- Spring Thorpe, A.J.¹ Moore, W.T.² Majeed, A.³ Streater, R.W.⁴

19
- 36449004664
- M.L. Gary and C.W. Ebert, J. Appl. Phys. 71 (1992) 3294.
- (1992) J. Appl. Phys. , vol.71 , pp. 3294
- Gary, M.L.¹ Ebert, C.W.²

20
- 3042663455
- T.S. Kim, L.A. Files and L.K. Magel, Appl. Phys. Lett. 68 (1996) 2126.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2126
- Kim, T.S.¹ Files, L.A.² Magel, L.K.³

21
- 30244468322
- unpublished
- N.Y. Li, Y.M. Hsin, W.G. Bi, P.M. Asbeck and C.W. Tu, unpublished.
- Li, N.Y.¹ Hsin, Y.M.² Bi, W.G.³ Asbeck, P.M.⁴ Tu, C.W.⁵

22
- 30244544130
- to be published
- Y.M. Hsin, N.Y. Li, C.W. Tu and P.M. Asbeck, Mater. Res. Soc. Proc. (1997), to be published.
- (1997) Mater. Res. Soc. Proc.
- Hsin, Y.M.¹ Li, N.Y.² Tu, C.W.³ Asbeck, P.M.⁴

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