A comparison of the reactions of phosphorus precursors on deposited GaP and InP films

Journal of Crystal Growth

Volumn 181, Issue 4, 1997, Pages 321-325

  Hill, C W ^a   Stringfellow, G B ^a   Sadwick, L P ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

TBBDMAP; TBP; TDMAP

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BEAM EPITAXY; DECOMPOSITION; PHOSPHORUS; REACTION KINETICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

TERTIARYBUTYL PHOSPHINE; TERTIARYBUTYLBISDIMETHYLAMINO PHOSPHINE; TRISDIMETHYLAMINOPHOSPHORUS;

SEMICONDUCTING FILMS;

EID: 0031549815     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00306-0     Document Type: Article

References (12)

1. G.J. Davies, P.J. Skevington, E.G. Scott, C.L. French, J.S. Foord, J. Crystal Growth 107 (1991) 999.
2. G.B. Stringfellow, J. Crystal Growth 105 (1990) 260.
3. C.W. Hill, G.B. Stringfellow, L.P. Sadwick, J. Crystal Growth 162 (1996) 1.
4. C.W. Hill, R.W. Gedridge Jr., T.J. Groshens, G.B. Stringfellow, L.P. Sadwick, J. Electron. Mater. 25 (1996) 1434.
5. C.W. Hill, G.B. Stringfellow, L.P. Sadwick, J. Electron. Mater. 24 (1995) 731.
6. M. Weyers, M. Sato, J. Crystal Growth 115 (1991) 469.
7. L.P. Sadwick, C.W. Kim, H.H. Ryu, C.W. Hill, G.B. Stringfellow, R.W. Gedridge Jr., A.C. Jones, Mater. Res. Soc. Proc. 340 (1994) 167.
8. C.R. Abernathy, D.A. Bohling, G.T. Muhr, P.W. Wisk, Compound Semiconductor Epitaxy, Mater. Res. Soc. Proc. 340 (1994) 161.
9. H.H. Ryu, G.B. Stringfellow, L.P. Sadwick. R.W. Gedridge, Jr., A.C. Jones, Inst. Phys. Conf. Ser. 141 (1995) 63
10. H.H. Ryu, L.P. Sadwick, G.B. Stringfellow, R.W. Gedridge, Jr., T.J. Groshens, J. Crystal Growth 172 (1997) 1.
11. A.W. Adamson, Physical Chemistry of Surfaces, 4th ed., Wiley, New York, 1982, pp. 662, 663.
12. CRC Handbook of Chemistry and Physics, R.C. Weast, M.J. Astle (Eds.), 59th ed., CRC Press, Boca Raton, 1979, p. F-238.