Nature and growth of anodic and thermal oxides on GaAs and Al(x)Ga(1-x)As

Corrosion Science

Volumn 41, Issue 8, 1999, Pages 1467-1474

  Schmuki, P ^a   Hussey, R J ^a   Sproule, G I ^a   Tao, Y ^a   Wasilewski, Z R ^a   McCaffrey, J P ^a   Graham, M J ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Anodic oxides; Thermal oxides

Indexed keywords

ALUMINUM; ALUMINUM COMPOUNDS; AMMONIUM COMPOUNDS; COMPOSITION; GALLIUM COMPOUNDS; GROWTH (MATERIALS); INTERFACES (MATERIALS); OXYGEN; SECONDARY ION MASS SPECTROMETRY; SOLUTIONS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANODIC OXIDES; GALLIUM PHOSPHATE; THERMAL OXIDES;

OXIDES;

FILM; OXIDE; STRUCTURE;

EID: 0032818430     PISSN: 0010938X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0010-938X(98)00172-3     Document Type: Article

References (22)

1. C.W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces. Plenum Press, New York and London, 1985.
2. H. Hasegawa, H.L. Harnagel, J. Electrochem. Soc. 123 (1976) 713.
3. C.W. Fischer, S.W. Teare, J. Appl. Phys. 67 (1990) 2608.
4. G. Hollinger, R. Skheyte-Kabbani, M. Gendry, Phys. Rev. B 49 (1994) 11.
5. T. Ishikawa, H. Ikoma, Jpn. J. Appl. Phys. 31 (1992) 3981.
6. D.N. Butcher, B.J. Sealy, J. Phys. D: Appl. Phys. 11 (1978) 1451.
7. R. Beserman, S.A. Schwarz, D.M. Hwang, C.Y. Chen, Phys. Rev. B 44 (1991) 3025.
8. C.W. Wilmsen, R.W. Kee, K.M. Geib, J. Vac. Sci. Technol. 16 (1979) 1434.
9. G.P. Schwartz, B.V. Dutt, G.J. Gualtieri, Appl. Phys. Lett. 39 (1981) 52.
10. G. Weimann, W. Schlapp, Thin Solid Films 38 (1976) L5.
11. C.W. Wilmsen, R.W. Kee, J. Vac. Sci. Technol. 15 (1978) 1513.
12. W.W. Harvey, J. Kruger, Electrochim. Acta 16 (1971) 2017.
13. J. Yu, Y. Aoyagi, S. Iwai, K. Toyoda, S. Namba, J. Appl. Phys. 56 (1984) 1895.
14. K. Smekalin, G. Zhang, J. Lammasniemi, J. Electrochem. Soc. 141 (1994) L97.
15. F.A. Kish, S.J. Caracci, N. Holonyak Jr., K.C. Hsieh, J.E. Baker, S.A. Maranowski, A.R. Sugg, J.M. Dallesasse, R.M. Fletcher, C.P. Kuo, T.D. Osentowski, M.G. Craford, J. Electronic Mat. 21 (1992) 1133.
16. U.M. Mishra, P. Parikh, P. Chavarkar, J. Yen, J. Champlain, B. Thibeault, H. Reese, S.S. Shi, E. Hu, L. Zhu, J. Speck, in: IEDM 97, 21.1.1.
17. P. Schmuki, G.I. Sproule, J.A. Bardwell, Z.H. Lu, M.J. Graham, J. Appl. Phys. 79 (1996) 7303.
18. R.J. Hussey, G.I. Sproule, D.F. Mitchell, M.J. Graham, in: Proceedings of the 12th International Corrosion Congress, Houston, TX, 1993, vol. 5B, p. 3831.
19. P. Schmuki, M. Buchanan, B.F. Mason, G.I. Sproule, M.J. Graham, Appl. Phys. Lett. 68 (1996) 2675.
20. C.I.H. Ashby, J.P. Sullivan, P.P. Newcomer, N.A. Missert, H.Q. Hou, B.E. Hammons, M.J. Hafich, A.G. Baca, Appl. Phys. Lett. 70 (1997) 2443.
21. C.I.H. Ashby, J.P. Sullivan, P.P. Newcomer, N.A. Missert, H.Q. Hou, B.E. Hammons, A.G. Baca, in: Proceedings of the 26th State-of-the-Art Program on Compound Semiconductors, Proc. ECS vol. 97-1. The Electrochemical Society, Pennington, NJ, 1997, p. 58.
22. L.J. Chou, K.C. Hsieh, A. Moy, D.E. Wohlert, G. Pickrell, K.Y. Cheng, Appl. Phys. Lett. 72 (1998) 2722.