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Volumn 68, Issue 19, 1996, Pages 2675-2677

Thickness measurements of thin anodic oxides on GaAs using atomic force microscopy, profilometry, and secondary ion mass spectrometry

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[No Author keywords available]

Indexed keywords


EID: 0342727730     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116278     Document Type: Article
Times cited : (3)

References (7)
  • 2
    • 0027530653 scopus 로고    scopus 로고
    • J. P. McCaffrey, Microsc. Res. Tech. 24, 180 (1993).
    • J. P. McCaffrey, Microsc. Res. Tech. 24, 180 (1993).
  • 4
    • 21544456447 scopus 로고    scopus 로고
    • R. J. Hussey, T. L. Hoffmann, and M. J. Graham, Electrochem. Soc. Proc. 94-16, 440 (1994).
    • R. J. Hussey, T. L. Hoffmann, and M. J. Graham, Electrochem. Soc. Proc. 94-16, 440 (1994).
  • 5
    • 21544437647 scopus 로고    scopus 로고
    • C. W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces (Plenum, New York, 1985).
    • C. W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces (Plenum, New York, 1985).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.