Ion dechanneling studies of defects in an ion-beam-synthesized epilayer sandwich system: Si(111)/CoSi 2 /Si

Applied Surface Science

Volumn 125, Issue 2, 1998, Pages 173-177

  Satyam, P V ^a,b   Sekar, K ^a   Kuri, G ^a   Sundaravel, B ^a   Mahapatra, D P ^a   Dev, B N ^a  

^a INSTITUTE OF PHYSICS   (India)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Defects; Ion scattering; Surfaces and interfaces

Indexed keywords

COBALT COMPOUNDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; HETEROJUNCTIONS; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STACKING FAULTS;

COBALT SILICIDES; ION BEAM SYNTHESIS; ION DECHANNELING;

SEMICONDUCTING FILMS;

EID: 0032001295     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00394-2     Document Type: Article

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