Comparative investigation of gate leakage current in single and double channel InP HEMT

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 505-508

  Ladner, C ^a   Berthelemot Aupetit, C ^a   Nezzari, A ^a   Decobert, J ^a   Harmand, J C ^a   Post, G ^a   Vigier, P ^a   Dumas, J M ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

DOUBLE CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR; DRAIN CURRENT; SINGLE CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032300416     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)