Characterization of Er-doped III-V nitride epilayers prepared by MOMBE

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 193-197

  Zavada, J M ^a   Wilson, R G ^a   Schwartz, R N ^a   MacKenzie, J D ^a   Abernathy, C R ^a   Pearton, S J ^a   Wu, X ^a   Hommerich, U ^a  

^a U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; LUMINESCENCE OF INORGANIC SOLIDS; MOLECULAR BEAM EPITAXY; NITRIDES; ORGANOMETALLICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ALUMINUM NITRIDE FILMS; EPILAYERS; ERBIUM DOPED ALUMINUM NITRIDE; METAL-ORGANIC MOLECULAR BEAM EPITAXY;

ERBIUM;

EID: 0030398885     PISSN: 02729172     EISSN: None     Source Type: None    
DOI: 10.1557/proc-422-193     Document Type: Conference Paper

References (7)