High-resolution X-ray diffraction on self-organized step bunches of Si1-xGex grown on (113)-oriented Si

Journal of Physics D: Applied Physics

Volumn 32, Issue 10 A, 1999, Pages

  Stangl, J ^a   Holy V ^a,c   Darhuber, A A ^a   Mikulik P ^a   Bauer, G ^a   Zhu, J ^b   Brunner, K ^b   Abstreiter, G ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c MASARYK UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GREEN'S FUNCTION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MULTILAYERS; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES;

HIGH RESOLUTION X RAY DIFFRACTION; STEP BUNCHES; STRUCTURAL CHARACTERIZATION; X RAY REFLECTIVITY;

X RAY DIFFRACTION ANALYSIS;

EID: 0032689285     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/10A/315     Document Type: Article

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