Fabrication of uniform InGaAs/GaAs quantum wires on V-grooved substrate by chemical beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 828-832

  Kim, Sung Bock ^a   Ro, Jeong Rae ^a   Park, Kyoung Wan ^a   Lee, El Hang ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

RESHARPENING FACTORS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032688644     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01450-X     Document Type: Article

References (14)

1. Grundmann M., Stier O., Bimberg D. Phys. Rev. B. 50:1994;14187.
2. Grundmann M., Ledenstsov N.N., Stier O., Bimberg D., Ustinov V.M., Kop'ev P.S., Alferov Zh.I. Appl. Phys. Lett. 68:1996;979.
3. Yamauchi Y., Takahashi T., Shulman J.N., Arakawa Y. Surf. Sci. 267:1992;291.
4. Bhat R., Kapon E., Hwang D.M., Koza M.A., Yun C.P. J. Crystal Growth. 93:1988;850.
5. Kapon E., Hwang D.W., Bhat R. Phys. Rev. Lett. 63:1989;430.
6. Tsukamoto S., Nakamune Y., Nishioka M., Arakawa Y. J. Appl. Phys. 71:1992;533.
7. Wang X.L., Ogura M., Matsuhata H. Appl. Phys. Lett. 66:1995;1506.
8. Gustafsson A., Reinhardt F., Biasoil G., Kapon E. Appl. Phys. Lett. 67:1995;3673.
9. Wang X.L., Ogura M., Matsuhata H. J. Crystal Growth. 171:1997;341.
10. Usami N., Mine T., Fukatsu S., Shiraki Y. Appl. Phys. Lett. 63:1993;2789.
11. Shen X.Q., Tanaka M., Nishinaga T. J. Crystal Growth. 127:1993;932.
12. Roskos H.G., Nuss M.C., Shah J., Leo K., Miller D.A.B. Phys. Rev. Lett. 68:1992;2216.
13. Li S.S., Xia J.B. Phys. Rev. B. 55:1997;15434.
14. Kim S.-B., Ro J.-R., Lee E.-H. ETRI J. 20:1998;231.