Realization of Vertically Stacked InGaAs/GaAs Quantum Wires on V-grooves with (322) Facet Sidewalls by Chemical Beam Epitaxy

ETRI Journal

Volumn 20, Issue 2, 1998, Pages 231-240

  Kim, Sung Bock ^a   Ro, Jeong Rae ^a   Lee, El Hang ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

V GROOVED SUBSTRATES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032096852     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.98.0198.0207     Document Type: Article

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