메뉴 건너뛰기




Volumn 10, Issue 3, 1999, Pages 209-213

Grazing incidence reciprocal space mapping of partially relaxed SiGe films

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN; STRESS RELAXATION; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

EID: 0032688558     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008900129541     Document Type: Article
Times cited : (2)

References (13)
  • 2
    • 33746991507 scopus 로고
    • B. S. MEYERSON, D. L. HARAME, J. STORK, E. CRABBE, J. COMFORT and G. PATTON, Int. J. High Speed Electron. Syst. 5 (1994) 473; B. S. MEYERSON, Proc. IEEE 40 (1992) 1592.
    • (1992) Proc. IEEE , vol.40 , pp. 1592
    • Meyerson, B.S.1
  • 5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.