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Volumn 10, Issue 3, 1999, Pages 209-213
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Grazing incidence reciprocal space mapping of partially relaxed SiGe films
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL ORIENTATION;
DISLOCATIONS (CRYSTALS);
EPITAXIAL GROWTH;
INTERFACES (MATERIALS);
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
STRAIN;
STRESS RELAXATION;
SURFACE ROUGHNESS;
X RAY CRYSTALLOGRAPHY;
LATTICE MISMATCH;
SILICON GERMANIDE;
STRAIN RELAXATION;
SEMICONDUCTING FILMS;
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EID: 0032688558
PISSN: 09574522
EISSN: None
Source Type: Journal
DOI: 10.1023/A:1008900129541 Document Type: Article |
Times cited : (2)
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References (13)
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