Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 504-507

  Udrea, F ^a   Chan, S S M ^b   Thomson, J ^b   Keller, S ^a   Amaratunga, G A J ^a   Millington, A D ^b   Waind, P R ^b   Crees, D E ^b  

^a Departmellt of Ellgilleerillg Cambridge Uiiversitv ^*  (United Kingdom)

^b GEC Plessey Semicoilductors   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GATE OXIDE QUALITY; HIGH VOLTAGE APPLICATIONS; INSULATED GATE; LAY-OUT; PHYSICAL ANALYSIS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 84907561689     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194476     Document Type: Conference Paper

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