Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1078-1080

  Fudeta, Mayuko ^a   Asahi, Hajime ^a   Kim, Seong Jin ^a   Noh, Joo Hyong ^a   Asami, Kumiko ^a   Gonda, Shun Ichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

GaP InP short period superlattice; Linewidth broadening; Photoluminescence; PL intensity; Quantum dot; Self formation; Vertical coupling

Indexed keywords

ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; MULTILAYERS; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; TEMPERATURE;

CARRIER TUNNELING PROCESS; FREE EXCITONS; MULTILAYER QUANTUM DOTS; PHOTOLUMINESCENCE LINEWIDTH BROADENING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032686336     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1078     Document Type: Article

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