High density of self-organized quantum dots formed in (GaP) n (InP) m short period superlattices grown on GaAs (N11)

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 97-102

  Kim, Seong Jin ^a   Asahi, Hajime ^a   Takemoto, Minori ^a   Noh, Joo Hyong ^a   Asami, Kumiko ^a   Gonda, Shun Ichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; MULTILAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM PHOSPHIDE; SELF ORGANIZED STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031547181     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00960-9     Document Type: Article

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