Piezoelectric coefficient of GaN measured by laser interferometry

Journal of Non-Crystalline Solids

Volumn 254, Issue 1-3, 1999, Pages 123-127

  Lueng, C M ^a   Chan, H L W ^a   Surya, C ^a   Fong, W K ^a   Choy, C L ^a   Chow, P ^b   Rosamond, M ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; FILM GROWTH; INTERFEROMETRY; LASER DIAGNOSTICS; MOLECULAR BEAM EPITAXY; NITRIDES; PIEZOELECTRIC MATERIALS; SEMICONDUCTING FILMS;

GALLIUM NITRIDE; LASER INTERFEROMETRY; PIEZOELECTRIC COEFFICIENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032684799     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00383-X     Document Type: Article

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