Transient enhanced diffusion and defect studies in B implanted Si

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 626-629

  Liu, J ^a   Krishnamoorthy, V ^a   Jones, K S ^a   Law, M E ^a   Shi, J ^a   Bennett, J ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BORON; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ION IMPLANTATION; MICROSTRUCTURE; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

TRANSIENT ENHANCED DIFFUSION;

SILICON WAFERS;

EID: 0030350937     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)