Effect of atomic-hydrogen treatment of (001) GaAs substrate at `high temperatures' on rf plasma-assisted molecular beam epitaxy of cubic GaN

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 227-232

  Yoshikawa, A ^a   Nagano, H ^a   Qin, Z X ^a   Sugure, Y ^a   Jia, A W ^a   Kobayashi, M ^a   Shimotomai, M ^a   Kato, Y ^a   Takahashi, K ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HYDROGEN; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SUBSTRATES;

ATOMIC HYDROGEN TREATMENT; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031365584     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)