High-Power 0.8 μm InGaAsP/InGaP/AlGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 PART 2, 1999, Pages 387-389

  Fukunaga, Toshiaki ^a   Wada, Mitsugu ^a   Hayakawa, Toshiro ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

AlGaAs; Catastrophic optical mirror damage; Characteristic temperature; High power; InGaAsP; Quantum well laser; Tensile strained barriers

Indexed keywords

CHARGE CARRIERS; CONTINUOUS WAVE LASERS; ENERGY GAP; HETEROJUNCTIONS; HIGH POWER LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

SEPARATE CONFINEMENT HETEROSTRUCTURES (SCH); TENSILE-STRAINED BARRIERS;

QUANTUM WELL LASERS;

EID: 0032676969     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l387     Document Type: Article

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