Compositional and electrical properties of SiO2/Si3N4/SiO2 stacked films grown onto silicon substrates and annealed in hydrogen

Journal of Non-Crystalline Solids

Volumn 216, Issue , 1997, Pages 156-161

  Santucci, S ^a   Alfonsetti, R ^b   Di Giacomo, A ^b   Fiorani, P ^b   Lozzi, L ^a   Moccia, G ^b   Ottaviano, L ^a   Passacantando, M ^a   Picozzi, P ^a  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FILM GROWTH; MASS SPECTROMETRY; SEMICONDUCTING SILICON; SILICA; SILICON NITRIDE; SINTERING; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ION MASS SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0031208513     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(97)00209-3     Document Type: Article

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