Experimental evidence of boron induced charged defects in amorphous silicon materials

Thin Solid Films

Volumn 348, Issue 1, 1999, Pages 79-83

  Caputo, D ^a   De Cesare, G ^a   Nascetti, A ^a   Palma, F ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMS; BORON; CAPACITANCE; DEFECTS; DIFFUSION; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; INFRARED RADIATION; REACTION KINETICS;

CHARGED DEFECTS; PHOTOCAPACITANCE; VALENCE BAND;

SOLAR CELLS;

EID: 0032673771     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00034-6     Document Type: Article

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