SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 303, Issue 1-2, 1997, Pages 269-272

Investigation of amorphous silicon compensated materials over a wide range of dopant concentrations

(6) Caputo, D a De Cesare, G a Palma, F a Tucci, M a Minarini, C b Terzini, E b

a SAPIENZA UNIVERSITY OF ROME (Italy)

b ENEA (Italy)

Author keywords

Amorphous materials; Compensation; Defect kinetics

Indexed keywords

AMORPHOUS SILICON; COMPOSITION EFFECTS; DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; SILANES;

DEFECT KINETICS; DIBORANE; PHOSPHINE;

AMORPHOUS FILMS;

EID: 0031187754 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00067-9 Document Type: Article

Times cited : (9)

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