Effect of μ-doped compensated material on stability of a-Si:H solar cells

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 27-32

  Caputo, D ^a   de Cesare, G ^a   Palma, F ^a   Tucci, M ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHARACTERIZATION; DEGRADATION; DEPOSITION; DOPING (ADDITIVES); FILM GROWTH; HYDROGENATION; PHOTOCONDUCTIVITY; SEMICONDUCTOR DEVICE STRUCTURES; STABILITY;

DIBORANE; DOPING EFFICIENCY; PHOSPHINE; PHOTOSENSITIVITY RATIO; STAEBLER-WRONSKI EFFECT;

SILICON SOLAR CELLS;

EID: 0030409882     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-27     Document Type: Conference Paper

References (6)