Incorporation kinetics of As2 and As4 on GaAs(110)

Surface Science

Volumn 371, Issue 2-3, 1997, Pages 277-288

  Tok, E S ^a   Neave, J H ^a   Allegretti, F E ^a   Zhang, J ^a   Jones, T S ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Adsorption kinetics; Arsenic; Chemisorption; Epitaxy; Gallium; Gallium arsenide; Models of surface kinetics; Molecular beam epitaxy; Reflection high energy electron diffraction (RHEED); Semiconducting films; Semiconducting surfaces; Single crystal surfaces

Indexed keywords

ACTIVATION ENERGY; ARSENIC; CHEMISORPTION; DESORPTION; MOLECULAR BEAM EPITAXY; PHASE INTERFACES; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THERMAL EFFECTS;

INCORPORATION COEFFICIENTS; SURFACE KINETIC MODEL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031075785     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01085-0     Document Type: Article

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