Preparation of intrinsic josephson junctions using Bi-2212 thin films

IEEE Transactions on Applied Superconductivity

Volumn 9, Issue 2 PART 3, 1999, Pages 4503-4506

  Inoue, Masumi ^a   Yoshida, Masato ^a   Senzaki, Toshio ^a   Sugihara, Yasuaki ^a   Otsuka, Jun ^a   Ohbayashi, Kazushige ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CURRENT VOLTAGE CHARACTERISTICS; GRAIN GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; HYSTERESIS; OXIDE SUPERCONDUCTORS; SINGLE CRYSTALS; SUPERCONDUCTING FILMS; SURFACE STRUCTURE;

CRYSTAL GRAIN; GAP STRUCTURE;

JOSEPHSON JUNCTION DEVICES;

EID: 0032670390     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.784026     Document Type: Article

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