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Journal of Non-Crystalline Solids

Volumn 254, Issue 1-3, 1999, Pages 11-16

Improved hydrogen free chemical vapor deposition of silicon dioxide

(3) Uchida, Yasutaka a Taguchi, Kohshi a Matsumura, Masakiyo b

a TEIKYO UNIVERSITY OF SCIENCE (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMINES; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; HYDRATION; SILANES; SILICA; WATER;

BREAKDOWN FIELD STRENGTH;

ELECTRIC INSULATING MATERIALS;

EID: 0032664661 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(99)00431-7 Document Type: Article

Times cited : (3)

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