Pattern-dependent charging in plasmas

IEEE Transactions on Plasma Science

Volumn 27, Issue 1, 1999, Pages 102-103

  Hwang, Gyeong S ^a   Giapis, Konstantinos P ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; COMPUTER SIMULATION; DYNAMICS; ELECTRONS; IONS; MONTE CARLO METHODS; PLASMA SHEATHS; SURFACES;

CHARGING; CHARGING DAMAGE; PLASMA SHEATH DYNAMICS;

PLASMAS;

EID: 0032663162     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.763065     Document Type: Article

References (4)

1. K. P. Giapis and G. S. Hwang, "Pattern-dependent charging and the role of electron tunneling," Jpn. J. Appl. Phys., vol. 37, pp. 2281-2290, 1998, and references cited therein.
2. K. Hashimoto, "New phenomena of charge damage in plasma etching: Heavy damage only through dense-line antenna," Jpn. J. Appl. Phys., vol. 32, pp. 6109-6113, 1993.
3. G. S. Hwang and K. P. Giapis, "On the origin of the notching effect during etching in uniform high-density plasmas," J. Vac. Sci. Technol. B, vol. 15, pp. 70-87, 1997.
4. _, "The influence of surface currents on pattern-dependent charging and notching," J. Appl. Phys., vol. 84, pp. 683-689, 1998.