A growth model for the carbonization of silicon surfaces

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 199-202

  Cimalla, V ^a   Pezoldt, J ^a   Eichhorn, G ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Atomic force microscopy; Ellipsometry; Growth kinetics model; Rapid thermal processing; Silicon carbide; Silicon surface carbonization

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBONIZATION; COMPOSITION EFFECTS; ELLIPSOMETRY; EPITAXIAL GROWTH; HEAT TREATMENT; MATHEMATICAL MODELS; NUCLEATION; REACTION KINETICS; SILICON CARBIDE; SURFACES; THERMAL EFFECTS;

RAPID THERMAL PROCESSING;

SILICON;

EID: 0031118288     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01964-2     Document Type: Article

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