Boron implantation into GaAs/Ga0.5In0.5P heterostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 175-180

  Henkel, Achim ^a   Delage, Sylvain Laurent ^a   Di Forte Poisson, Marie Antoinette ^a   Blanck, Hervé ^a   Hartnagel, Hans Ludwig ^b  

^a THALES   (France)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Boron implantation; Electrical properties; GaAs; GaInP; Isolation; Thermal annealing

Indexed keywords

GALLIUM INDIUM PHOSPHIDE; TRANSMISSION LINE MODEL (TLM);

ANNEALING; CAPACITANCE MEASUREMENT; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT;

HETEROJUNCTIONS;

EID: 0030649742     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.175     Document Type: Article

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