Extremely low noise InGaP/GaAs HBT oscillator at C-band

Electronics Letters

Volumn 34, Issue 8, 1998, Pages 813-814

  Perez S ^a   Floriot, D ^b   Maurin, P ^b   Bouquet, P ^b   Gutierrez P M ^a   Obregon, J ^c   Delage, S L ^b  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b THALES   (France)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK SYNTHESIS; ELECTRIC NETWORK TOPOLOGY; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

DIELECTRIC RESONATOR OSCILLATORS (DRO);

OSCILLATORS (ELECTRONIC);

EID: 0032051165     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980553     Document Type: Article

References (4)

1. TUTT, M.N., PAVLIDIS, D., KHATIBZADEH, A., and BAYRAKTAROGLU, B.: 'Low frequency noise characteristics of self-aligned AIGaAs/GaAs power heterojunction bipolar transistors', IEEE Trans. Electron. Devices, 1995, ED-42, pp. 219-230
2. BLANCK, H., DELAGE, S.L., CASSETTE, S., CHARTIER, E., FLORIOT, D., POISSON, M.-A., BRYLINSKY, C., PONS, D., ROUX, P., BOURNE, P., and QUENTIN, P.: 'Fully monolithic Ku and Ka-band InGaP/GaAs HBT wideband VCOs'. 1994 IEEE MTT-S Int. Microw. Symp. Dig., 1994, pp. 127-130
3. QUERE, R., NGOYA, E., MONS, S., ROUSSET, J., CAMIADE, M., and OBREGON, J.: 'Linear and nonlinear stability analysis of microwave circuits'. GaAs'96, Paris, June 1996, Paper 7INVI
4. REFFET, D., PRINGENT, M., MAURIN, PH., and OBREGON, J.: 'Workshop: Dielectric resonators in microwave active and passive circuits: Dielectric resonators and microwaves oscillators'. IEEE MTT-S '96, San Francisco, 17-21 June 1996