Silicide reaction of Co with Si0.999C0.001

Solid-State Electronics

Volumn 43, Issue 6, 1999, Pages 1051-1054

  Teichert, S ^a   Falke, M ^a   Giesler, H ^a   Beddies, G ^a   Hinneberg, H J ^a   Lippert, G ^b   Griesche, J ^b   Osten, H J ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; CRYSTAL ORIENTATION; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON BEAMS; EVAPORATION; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SUBSTRATES;

ELECTRON BEAM EVAPORATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032656646     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00023-4     Document Type: Article

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