Highly perfect thin films of SiC: X-ray double crystal diffractometry and X-ray double crystal topographic study

Thin Solid Films

Volumn 292, Issue 1-2, 1997, Pages 1-6

  Chaudhuri, J ^a   Cheng, X ^a   Yuan, C ^b   Steckl, A J ^c  

^a Wichita State University   (United States)

^b EMCORE CORPORATION   (United States)

^c University of Cincinnati   (United States)

Author keywords

Chemical vapour deposition (CVD); Epitaxy; Silicon carbide; X ray diffraction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALS; EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

DETECT DENSITY; X RAY DOUBLE CRYSTAL TOPOGRAPHY;

THIN FILMS;

EID: 0031553462     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08983-3     Document Type: Article

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