Carrier transport effects in 1.3μm MQW InGaAsP laser design

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 250-253

  Silfvenius, Christofer ^a   Landgren, Gunnar ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE;

AUGER RECOMBINATION RATE; CARRIER DISTRIBUTION; VALENCE BAND;

QUANTUM WELL LASERS;

EID: 0032300443     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)