Point defect redistribution in Si1-xGex alloys

Journal of Materials Science: Materials in Electronics

Volumn 10, Issue 5, 1999, Pages 339-343

  Paine, A D N ^a   Willoughby, A F W ^a   Bonar, J M ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON ALLOYS;

POINT DEFECT REDISTRIBUTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032649392     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1008989221789     Document Type: Article

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