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Volumn 149, Issue 1, 1999, Pages 144-147
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Positron annihilation spectroscopy of laser-irradiated 4H-SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHIZATION;
CRYSTAL DEFECTS;
EXCIMER LASERS;
IRRADIATION;
LASER BEAM EFFECTS;
SPECTROSCOPIC ANALYSIS;
POSITRON ANNIHILATION SPECTROSCOPY (PAS);
VACANCY AGGLOMERATION;
SILICON CARBIDE;
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EID: 0032646609
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(99)00190-7 Document Type: Article |
Times cited : (1)
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References (10)
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